GSMDP0902 Datasheet (Globaltech) - 100V N-Channel MOSFETs

GSMDP0902, 100V N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDP0902 Features

* 100V, 80A, RDS(ON)=13mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED Applications

* Quick Charger Packages & Pin Assignments GSMDP0902TF (TO-220) Top View Pin