GSMDP4960 Datasheet (Globaltech)

GSMDP4960, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDP4960 Features

* 40V, 150A, RDS(ON)=3.8mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* TO-220 package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages & Pin Assignments GSMDP4960TF (T