GSMDP0966A Datasheet (Globaltech)

GSMDP0966A, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSMDP0966A Features

* 100V, 60A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* TO-220 package design Applications

* Networking

* Load Switch

* LED Applications Packages & Pin Ass