GSMDS3710 Datasheet - Globaltech

GSMDS3710 N+P Dual-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

GSMDS3710 Features

* N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V

* P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V

* Fast switching

* Suit for 4.5V / -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* DC Fan

* Motor Dri

GSMDS3710-Globaltech.pdf

GSMDS3710 Datasheet Preview — Preview of GSMDS3710 PDF

Datasheet Details

Part number:

GSMDS3710

Manufacturer:

Globaltech

File Size:

821.11 KB

Description:

N+p dual-channel mosfet.

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GSMDS3710 GSMDS3710 N +P Dual-Channel MOSFET Globaltech

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