GSMDS3710 N+P Dual-Channel MOSFET

Globaltech

Description

GSMDS3710 30V N+P Dual Channel MOSFETs Product .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Datasheet Specifications

Part number: GSMDS3710
Manufacturer: Globaltech
File Size: 821.11 KB
Datasheet: GSMDS3710-Globaltech.pdf
Description: N+P Dual-Channel MOSFET

Features

* N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V
* P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V
* Fast switching

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GSMDS3710 N +P Dual-Channel MOSFET Globaltech

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