GSMDS3710 Datasheet - Globaltech

GSMDS3710 - N+P Dual-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

GSMDS3710 Features

* N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V

* P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V

* Fast switching

* Suit for 4.5V / -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* DC Fan

* Motor Dri

GSMDS3710-Globaltech.pdf