GSMDS3810 Datasheet - Globaltech

GSMDS3810 - Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDS3810 Features

* 30V, 10A, RDS(ON)=13mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOP-8 package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages & Pin

GSMDS3810-Globaltech.pdf