GSMDS3810
Globaltech
452.09kb
Dual n-channel mosfet. These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has b
TAGS
📁 Related Datasheet
GSMDS3807 - Dual P-Channel MOSFET
(Globaltech)
GSMDS3807
30V Dual P-Channel MOSFETs
Product Description
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS t.
GSMDS3710 - N+P Dual-Channel MOSFET
(Globaltech)
GSMDS3710
30V N+P Dual Channel MOSFETs
Product Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DM.
GSMDS3903 - P-Channel MOSFET
(Globaltech)
GSMDS3903
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3904 - N-Channel MOSFET
(Globaltech)
GSMDS3904
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3906 - N-Channel MOSFET
(Globaltech)
GSMDS3906
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3907 - P-Channel MOSFET
(Globaltech)
GSMDS3907
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3908 - N-Channel MOSFET
(Globaltech)
GSMDS3908
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3911 - P-Channel MOSFET
(Globaltech)
GSMDS3911
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS3912 - N-Channel MOSFET
(Globaltech)
GSMDS3912
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..
GSMDS04N15 - N-Channel MOSFET
(Globaltech)
GSMDS04N15
150V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog.