GSMDS3810 Datasheet - Globaltech

GSMDS3810 Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDS3810 Features

* 30V, 10A, RDS(ON)=13mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOP-8 package design Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Packages & Pin

GSMDS3810-Globaltech.pdf

GSMDS3810 Datasheet Preview — Preview of GSMDS3810 PDF

Datasheet Details

Part number:

GSMDS3810

Manufacturer:

Globaltech

File Size:

452.09 KB

Description:

Dual n-channel mosfet.

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GSMDS3810 GSMDS3810 Dual N-Channel MOSFET Globaltech

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