GSMDS3807 Datasheet - Globaltech

GSMDS3807 - Dual P-Channel MOSFET

These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDS3807 Features

* -30V, -7A, RDS(ON)=23mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* MB / VGA / Vcore

* Load Switch

* LED Applica

GSMDS3807-Globaltech.pdf