GSMDS3807 Datasheet - Globaltech

GSMDS3807 Dual P-Channel MOSFET

These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDS3807 Features

* -30V, -7A, RDS(ON)=23mΩ@VGS=-10V

* Improved dv/dt capability

* Fast switching

* Suit for -4.5V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* MB / VGA / Vcore

* Load Switch

* LED Applica

GSMDS3807-Globaltech.pdf

GSMDS3807 Datasheet Preview — Preview of GSMDS3807 PDF

Datasheet Details

Part number:

GSMDS3807

Manufacturer:

Globaltech

File Size:

404.07 KB

Description:

Dual p-channel mosfet.

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GSMDS3807 GSMDS3807 Dual P-Channel MOSFET Globaltech

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