GSMDS6808 - Dual N-Channel MOSFET
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
GSMDS6808 Features
* 60V, 10A, RDS(ON)=34mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* SOP-8 package design Applications
* Motor Drive
* Power Tools
* LED Lighting Packages & Pin Assignme
