GSMDS6808 Datasheet - Globaltech

GSMDS6808 Dual N-Channel MOSFET

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode..

GSMDS6808 Features

* 60V, 10A, RDS(ON)=34mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOP-8 package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin Assignme

GSMDS6808-Globaltech.pdf

GSMDS6808 Datasheet Preview — Preview of GSMDS6808 PDF

Datasheet Details

Part number:

GSMDS6808

Manufacturer:

Globaltech

File Size:

450.72 KB

Description:

Dual n-channel mosfet.

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GSMDS6808 GSMDS6808 Dual N-Channel MOSFET Globaltech

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