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GSMDS0966

N-Channel MOSFET

GSMDS0966 Features

* 100V, 10A, RDS(ON)=18mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOP-8 package design Applications

* Networking

* Load Switch

* LED applications Packages & Pin Assi

GSMDS0966 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS0966 Datasheet (499.03 KB)

Preview of GSMDS0966 PDF

Datasheet Details

Part number:

GSMDS0966

Manufacturer:

Globaltech

File Size:

499.03 KB

Description:

N-channel mosfet.

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TAGS

GSMDS0966 N-Channel MOSFET Globaltech

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