GSMDS2305 Datasheet, Mosfet, Globaltech

GSMDS2305 Features

• Mosfet
• -20V, -11A, RDS(ON)=16mΩ@VGS=-4.5V
• Improved dv/dt capability
• Fast switching
• Suit for -1.8V Gate Drive Applications
• Green Device Availab

PDF File Details

Part number:

GSMDS2305

Manufacturer:

Globaltech

File Size:

554.25kb

Download:

📄 Datasheet

Description:

P-channel mosfet. These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

GSMDS2305 Application

• Applications Features
• -20V, -11A, RDS(ON)=16mΩ@VGS=-4.5V
• Improved dv/dt capability
• Fast switching
• Suit for

TAGS

GSMDS2305

Globaltech

📁 Related Datasheet

GSMDS2603 - P-Channel MOSFET (Globaltech)
GSMDS2603 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS04N15 - N-Channel MOSFET (Globaltech)
GSMDS04N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog.

GSMDS0956 - N-Channel MOSFET (Globaltech)
GSMDS0956 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

GSMDS0966 - N-Channel MOSFET (Globaltech)
GSMDS0966 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

GSMDS3710 - N+P Dual-Channel MOSFET (Globaltech)
GSMDS3710 30V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DM.

GSMDS3807 - Dual P-Channel MOSFET (Globaltech)
GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS t.

GSMDS3810 - Dual N-Channel MOSFET (Globaltech)
GSMDS3810 30V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS t.

GSMDS3903 - P-Channel MOSFET (Globaltech)
GSMDS3903 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3904 - N-Channel MOSFET (Globaltech)
GSMDS3904 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..

GSMDS3906 - N-Channel MOSFET (Globaltech)
GSMDS3906 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..