GSMDS0956 Datasheet - Globaltech

GSMDS0956 - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS0956 Features

* 100V, 12A, RDS(ON)=115mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available

* SOP-8 package design Applications

* Networking

* Load Switch

* LED Applications Packages & Pin Ass

GSMDS0956-Globaltech.pdf