GSMDS04N15 Datasheet - Globaltech

GSMDS04N15 - N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS04N15 Features

* 150V, 4A, RDS(ON)=65mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* LED applications Packages & Pin Assignments GSMDS04N15SF (SOP-8) Pin

GSMDS04N15-Globaltech.pdf