GSMDS2603 Datasheet - Globaltech

GSMDS2603 - P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSMDS2603 Features

* -20V, -14A, RDS(ON)=8.5mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOP-8 package design Applications

* Notebook

* Load Switch

* Networking

* Hand-Held Instruments Packages & P

GSMDS2603-Globaltech.pdf