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GPT11N65D, GPT11N65 - POWER FIELD EFFECT TRANSISTOR

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GPT11N65D Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT11N65D, GPT11N65. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	GPT11N65D, GPT11N65
Manufacturer	Greatpower
File Size	1.18 MB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT11N65-Greatpower.pdf
Note	This datasheet PDF includes multiple part numbers: GPT11N65D, GPT11N65. Please refer to the document for exact specifications by model.

GPT11N65D Product details

Features

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

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Published: Nov 8, 2017 |