Part number:
GPT12N45D
Manufacturer:
Greatpower
File Size:
1.18 MB
Description:
Power field effect transistor.
* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE
GPT12N45D
Greatpower
1.18 MB
Power field effect transistor.
📁 Related Datasheet
GPT12N45 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT12N45 / GPT12N45D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High .
GPT12N50 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT12N50 / GPT12N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High .
GPT12N50D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT12N50 / GPT12N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High .
GPT12N60 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination scheme to pro.
GPT12N60D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT12N60 / GPT12N60D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination scheme to pro.
GPT1000A - General Touch Sensor Controller
(Generalplus)
GPT1000A
General Touch Sensor Controller
APR. 30, 2012 Version 1.1
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without.
GPT1001A - General Touch Sensor Controller
(Generalplus)
GPT1001A
General Touch Sensor Controller
May 02, 2012 Version 1.0
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without .
GPT10N45 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT10N45 GPT10N45D
POWER FIELD EFFECT TRANSISTOR
FEATURES
This high voltage MOSFET uses an advanced termination scheme to provid.
