GPT12N50 POWER FIELD EFFECT TRANSISTOR

Description

GPT12N50 / GPT12N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

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Datasheet Specifications

Part number: GPT12N50
Manufacturer: Greatpower
File Size: 1.28 MB
Datasheet: GPT12N50-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected vol

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GPT12N50 POWER FIELD EFFECT TRANSISTOR Greatpower

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