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GPT12N60D, GPT12N60 Datasheet - Greatpower

GPT12N60D, GPT12N60, POWER FIELD EFFECT TRANSISTOR

GPT12N60 / GPT12N60D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance.
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GPT12N60-Greatpower.pdf

This datasheet PDF includes multiple part numbers: GPT12N60D, GPT12N60. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

GPT12N60D, GPT12N60

Manufacturer:

Greatpower

File Size:

1.17 MB

Description:

POWER FIELD EFFECT TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: GPT12N60D, GPT12N60.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Reduced Gate Charge Ultra Low On-Res

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