GPT12N50D, GPT12N50 Datasheet - Greatpower

GPT12N50D, GPT12N50, POWER FIELD EFFECT TRANSISTOR

GPT12N50 / GPT12N50D POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

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GPT12N50-Greatpower.pdf

GPT12N50D Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT12N50D, GPT12N50. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

GPT12N50D, GPT12N50

Manufacturer:

Greatpower

File Size:

1.28 MB

Description:

POWER FIELD EFFECT TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: GPT12N50D, GPT12N50.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected vol

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