GPT13N50C Datasheet - Greatpower

GPT13N50C, POWER FIELD EFFECT TRANSISTOR

GPT13N50C / GPT13N50CD POWER FIELD EFFECT TRANSISTOR GENERAL .
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capabil.

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Datasheet Details

Part number:

GPT13N50C

Manufacturer:

Greatpower

File Size:

727.12 KB

Description:

POWER FIELD EFFECT TRANSISTOR

Features

* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin ag

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GPT13N50C POWER FIELD EFFECT TRANSISTOR Greatpower

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