Part number:
GPT13N65
Manufacturer:
Greatpower
File Size:
290.07 KB
Description:
Power field effect transistor.
GPT13N65 Datasheet (290.07 KB)
* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer
GPT13N65 Datasheet (290.07 KB)
GPT13N65
Greatpower
290.07 KB
Power field effect transistor.
📁 Related Datasheet
GPT13N65D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT13N65 / GPT13N65D
POWER FIELD EFFECT TRANSISTOR
FEATURES
This high voltage MOSFET uses an advanced termination scheme to prov.
GPT13N50 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT13N50 / GPT13N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High .
GPT13N50C - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT13N50C / GPT13N50CD
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust Hig.
GPT13N50CD - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT13N50C / GPT13N50CD
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust Hig.
GPT13N50D - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GPT13N50 / GPT13N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High .
GPT1000A - General Touch Sensor Controller
(Generalplus)
GPT1000A
General Touch Sensor Controller
APR. 30, 2012 Version 1.1
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without.
GPT1001A - General Touch Sensor Controller
(Generalplus)
GPT1001A
General Touch Sensor Controller
May 02, 2012 Version 1.0
GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without .
GPT10N45 - POWER FIELD EFFECT TRANSISTOR
(Greatpower)
GENERAL DESCRIPTION
GPT10N45 GPT10N45D
POWER FIELD EFFECT TRANSISTOR
FEATURES
This high voltage MOSFET uses an advanced termination scheme to provid.
