GPT13N65D, GPT13N65 POWER FIELD EFFECT TRANSISTOR

Description

GENERAL .
GPT13N65 / GPT13N65D POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage.

📥 Download Datasheet

GPT13N65D Datasheet Preview — This datasheet PDF includes multiple part numbers: GPT13N65D, GPT13N65. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: GPT13N65D, GPT13N65
Manufacturer: Greatpower
File Size: 290.07 KB
Datasheet: GPT13N65-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: GPT13N65D, GPT13N65.
Please refer to the document for exact specifications by model.

Features

* This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION
* Robust High

GPT13N65D Distributors

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GPT13N65 POWER FIELD EFFECT TRANSISTOR Greatpower

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