GPT14N65 Datasheet (Greatpower) - POWER FIELD EFFECT TRANSISTOR

GPT14N65, POWER FIELD EFFECT TRANSISTOR

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers

GPT14N65 Features

* Robust High Voltage Termination

* Avalanche Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at El