GPT14N65 POWER FIELD EFFECT TRANSISTOR

Description

GPT14N65 / GPT14N65D POWER FIELD EFFECT TRANSISTOR GENERAL .
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

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Datasheet Specifications

Part number: GPT14N65
Manufacturer: Greatpower
File Size: 229.30 KB
Datasheet: GPT14N65-Greatpower.pdf
Description: POWER FIELD EFFECT TRANSISTOR

Features

* Robust High Voltage Termination
* Avalanche Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at El

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GPT14N65 POWER FIELD EFFECT TRANSISTOR Greatpower

Greatpower GPT14N65-like datasheet