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GPT14N65 - POWER FIELD EFFECT TRANSISTOR

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Datasheet Details

Part number	GPT14N65
Manufacturer	Greatpower
File Size	229.30 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT14N65-Greatpower.pdf

GPT14N65 Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

Features

Robust High Voltage Termination.
Avalanche Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at El.

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Published: Nov 8, 2017 |