GPT14N65D - POWER FIELD EFFECT TRANSISTOR
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers
GPT14N65D Features
* Robust High Voltage Termination
* Avalanche Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at El
