Part number:
2SK2925S
Manufacturer:
Guangdong Kexin Industrial
File Size:
98.41 KB
Description:
N-channel silicon mosfet.
* Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0
2SK2925S
Guangdong Kexin Industrial
98.41 KB
N-channel silicon mosfet.
📁 Related Datasheet
2SK2925 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925 - Silicon N-Channel MOSFET
(Renesas)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 .
2SK2925L - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925L - Silicon N-Channel MOSFET
(Renesas)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 .
2SK2925S - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =.
2SK2925S - Silicon N-Channel MOSFET
(Renesas)
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching • 4 .
2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2920
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV)
2SK2920
Chopper Regulator, DC/DC Converter and Motor Drive Applications
.
2SK2922 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2922
Silicon N Channel MOS FET UHF Power Amplifier
ADE-208-675(Z) 1st. Edition Aug. 1998 Features
• High power output, High gain, High efficiency .