2SK3116 - MOSFET

Guangdong Kexin

Datasheet Details

Low gate charge QG = 26 nC TYP. (ID = 7.5 A, VDD = 450 V, VGS = 10 V) Low on-state resistance RDS(on) = 1.2 MAX. (VGS = 10 V, ID = 3.75 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratings 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 Gate voltage rating 30 V +0.2 8.7-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature St.

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Published: Apr 6, 2012 |