Part number:
2SK3899
Manufacturer:
Guangdong Kexin
File Size:
72.98 KB
Description:
Mos field effect transistor.
* Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Ab
2SK3899
Guangdong Kexin
72.98 KB
Mos field effect transistor.
📁 Related Datasheet
2SK389 - N-Channel MOSFET
(Toshiba Semiconductor)
.
2SK3891-01R - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3891-01R
FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 700V(Min) ·Static Drain-Source O.
2SK3891-01R - Power MOSFET
(Fuji Semiconductors)
2SK3891-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-r.
2SK3892 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3892
FEATURES ·Drain Current : ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 200V(Min) ·Static Drain-Source On-Re.
2SK3892 - Silicon N-channel power MOSFET
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving ci.
2SK3899 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor .
2SK3899-ZK - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3899-ZK
FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-.
2SK3800 - MOSFET
(Sanken)
MOS FET 2SK3800
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*2
80.