2SK3892
Inchange Semiconductor
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N-channel mosfet transistor.
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2SK389 - N-Channel MOSFET
(Toshiba Semiconductor)
.
2SK3891-01R - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3891-01R
FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage
: VDSS= 700V(Min) ·Static Drain-Source O.
2SK3891-01R - Power MOSFET
(Fuji Semiconductors)
2SK3891-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-r.
2SK3892 - Silicon N-channel power MOSFET
(Panasonic)
This product plies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving ci.
2SK3899 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor .
2SK3899 - MOS Field Effect Transistor
(Guangdong Kexin)
..
SMD Type
MOSFET
MOS Field Effect Transistor 2SK3899
TO-263
+0.1 1.27-0.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
Features
Low On.
2SK3899-ZK - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3899-ZK
FEATURES ·Drain Current : ID= 84A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-.
2SK3800 - MOSFET
(Sanken)
MOS FET 2SK3800
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*2
80.
2SK3800 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3800
FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=40V(Min) ·Static Drain-Source On-Resis.
2SK3801 - MOSFET
(Sanken)
MOS FET 2SK3801
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*1
10.