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2SK3113B Datasheet - NEC

2SK3113B MOS FIELD EFFECT TRANSISTOR

2SK3113B Features

* a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES

* Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)

* Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 1

2SK3113B Datasheet (222.44 KB)

Preview of 2SK3113B PDF

Datasheet Details

Part number:

2SK3113B

Manufacturer:

NEC

File Size:

222.44 KB

Description:

Mos field effect transistor.

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2SK3113B MOS FIELD EFFECT TRANSISTOR NEC

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