Part number:
2SK3113B
Manufacturer:
NEC
File Size:
222.44 KB
Description:
Mos field effect transistor.
* a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES
* Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A)
* Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 1
2SK3113B Datasheet (222.44 KB)
2SK3113B
NEC
222.44 KB
Mos field effect transistor.
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