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HM10N10K Datasheet - H&M Semiconductor

HM10N10K - N-Channel Enhancement Mode Power MOSFET

HM10N10K Features

* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technolo

HM10N10K-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM10N10K

Manufacturer:

H&M Semiconductor

File Size:

436.21 KB

Description:

N-channel enhancement mode power mosfet.

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