HM10N10K N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM10N10K N-Channel Enhancement Mode Power MOSFET .
The HM10N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM10N10K
Manufacturer: H&M Semiconductor
File Size: 436.21 KB
Datasheet: HM10N10K-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =100V,ID =9.6A RDS(ON) < 130mΩ @ VGS=10V (Typ:105mΩ)
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolo

HM10N10K Distributors

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HM10N10K N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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