HM10N60 Datasheet - H&M Semiconductor

HM10N60 600V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM10N60 Features

* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V

* Low gate charge ( typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Rati

HM10N60-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM10N60

Manufacturer:

H&M Semiconductor

File Size:

350.94 KB

Description:

600v n-channel mosfet.

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HM10N60 HM10N60 600V N-Channel MOSFET H&M Semiconductor

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