HM10N80A N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

HM10N80A General .
VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which red.

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Datasheet Specifications

Part number: HM10N80A
Manufacturer: H&M Semiconductor
File Size: 807.85 KB
Datasheet: HM10N80A-HMSemiconductor.pdf
Description: N-channel Enhanced VDMOSFET

Applications

* Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS EAR a1 IAR a1 dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source

HM10N80A Distributors

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HM10N80A N-channel Enhanced VDMOSFET H&M Semiconductor

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