Part number:
HM10N80A
Manufacturer:
H&M Semiconductor
File Size:
807.85 KB
Description:
N-channel enhanced vdmosfet.
Datasheet Details
VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 performance and enhance the avalanche energy.
The transistor can be used in various pow
HM10N80A Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD
Datasheet Details
HM10N80A
H&M Semiconductor
807.85 KB
N-channel enhanced vdmosfet.
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