HM10N80A Datasheet - H&M Semiconductor

HM10N80A N-channel Enhanced VDMOSFET

VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 performance and enhance the avalanche energy. The transistor can be used in various pow.

HM10N80A Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD

HM10N80A-HMSemiconductor.pdf