HM2301B Datasheet - H&M Semiconductor

HM2301B, P-Channel Trench Power MOSFET

HM2301B P-Channel Enhancement Mode Power MOSFET .
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

Features

* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired

HM2301B-HMSemiconductor.pdf