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HM2301BKR

P-Channel 20V (D-S) MOSFET

HM2301BKR Features

* RDS(ON)= 0.48Ω @VGS=-4.5V

* RDS(ON)= 0.67Ω @VGS=-2.5V

* RDS(ON)= 0.95Ω @VGS=-1.8V

* RDS(ON)= 2.20Ω @VGS=-1.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding

HM2301BKR General Description

The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS
* Power Management in Note book
* Portable Equipme.

HM2301BKR Datasheet (657.83 KB)

Preview of HM2301BKR PDF

Datasheet Details

Part number:

HM2301BKR

Manufacturer:

H&M Semiconductor

File Size:

657.83 KB

Description:

P-channel 20v (d-s) mosfet.

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TAGS

HM2301BKR P-Channel 20V D-S MOSFET H&M Semiconductor

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