Datasheet Details
- Part number
- HM2301BSR
- Manufacturer
- H&M Semiconductor
- File Size
- 659.85 KB
- Datasheet
- HM2301BSR-HMSemiconductor.pdf
- Description
- P-Channel 20V (D-S) MOSFET
HM2301BSR Description
HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL .
The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2301BSR Features
* RDS(ON)= 0.48Ω @VGS=-4.5V
* RDS(ON)= 0.67Ω @VGS=-2.5V
* RDS(ON)= 0.95Ω @VGS=-1.8V
* RDS(ON)= 2.20Ω @VGS=-1.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
* Capable doing Cu wire bonding
HM2301BSR Applications
* Power Management in Note book
* Portable Equipment
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