HM2301BSR Datasheet - H&M Semiconductor

HM2301BSR, P-Channel 20V (D-S) MOSFET

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL .
The HM2301BSR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

* RDS(ON)= 0.48Ω @VGS=-4.5V
* RDS(ON)= 0.67Ω @VGS=-2.5V
* RDS(ON)= 0.95Ω @VGS=-1.8V
* RDS(ON)= 2.20Ω @VGS=-1.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding

Applications

* Power Management in Note book
* Portable Equipment

HM2301BSR-HMSemiconductor.pdf