HM2301DR Datasheet, Mosfet, H&M Semiconductor

HM2301DR Features

• Mosfet
• RDS(ON)= 0.48Ω @VGS=-4.5V
• RDS(ON)= 0.67Ω @VGS=-2.5V
• RDS(ON)= 0.95Ω @VGS=-1.8V
• RDS(ON)= 2.20Ω @VGS=-1.5V
• Super high density cell design

PDF File Details

Part number:

HM2301DR

Manufacturer:

H&M Semiconductor

File Size:

385.91kb

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📄 Datasheet

Description:

P-channel 20v (d-s) mosfet. The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

HM2301DR Application

• Applications
• Power Management in Note book
• Portable Equipment
• Battery Powered System FEATURES
• RDS(ON)= 0.48

TAGS

HM2301DR

H&M Semiconductor

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