HM2301DR - P-Channel 20V (D-S) MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM2301DR
Manufacturer	H&M Semiconductor
File Size	385.91 KB
Description	P-Channel 20V (D-S) MOSFET
Datasheet	HM2301DR Datasheet
Additional preview pages of the HM2301DR datasheet.

Product details

Description

The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management in Note book Portable Equipment Battery Powered System

Features

RDS(ON)= 0.48Ω @VGS=-4.5V.
RDS(ON)= 0.67Ω @VGS=-2.5V.
RDS(ON)= 0.95Ω @VGS=-1.8V.
RDS(ON)= 2.20Ω @VGS=-1.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.
Load Switch.
DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V.
Th Oct, 201.

📁 Similar Datasheet

HM2302 - Digital temperature and humidity sensor (ETC)
HM2309 - P-Channel 60V MOSFET (VBsemi)
HM2310 - N-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)
HM236WU3-100 - TFT LCD (BOE)
HM236WU3-110 - TFT LCD (BOE)

Other Datasheets by H&M Semiconductor

HM2301D - P-Channel 20V (D-S) MOSFET
HM2301 - P-Channel Enhancement Mode Power MOSFET
HM2301A - P-Channel Enhancement Mode Power MOSFET
HM2301B - P-Channel Trench Power MOSFET
HM2301BJR - P-Channel MOSFET
HM2301BKR - P-Channel 20V (D-S) MOSFET

Published: Nov 27, 2018 |