HM2302BKR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM2302BKR
Manufacturer	H&M Semiconductor
File Size	557.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302BKR Datasheet
Additional preview pages of the HM2302BKR datasheet.

Product details

Description

The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management in Note book Portable Equipment Battery Powered System Load Switch

Features

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC N-Channel 3D 2302 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

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Published: Nov 27, 2018 |