Part number:
HM2302BWKR
Manufacturer:
H&M Semiconductor
File Size:
390.23 KB
Description:
Dual n-channel enhancement mode field effect transistor.
HM2302BWKR-HMSemiconductor.pdf
Datasheet Details
HM2302BWKR Features
* The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.8V, in the small SOT363 IRRWSULQW,Wcan be used for a wide variety of applications, LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC conve
HM2302BWKR-HMSemiconductor.pdf
Datasheet Details
HM2302BWKR
H&M Semiconductor
390.23 KB
Dual n-channel enhancement mode field effect transistor.
HM2302BWKR Distributor
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