Datasheet Details
- Part number
- HM2302BWKR
- Manufacturer
- H&M Semiconductor
- File Size
- 390.23 KB
- Datasheet
- HM2302BWKR-HMSemiconductor.pdf
- Description
- Dual N-Channel Enhancement Mode Field Effect Transistor
HM2302BWKR Description
HM2302BWKR +0%:.5 Dual N-Channel Enhancement Mode Field Effect Transistor General .
Features
The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.
HM2302BWKR Applications
* LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC converters. It is ESD protected. VDS (V) = 20V ID = 0.9 A (VGS = 4.5V)
RDS(ON)
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