HM2302BSR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM2302BSR
Manufacturer	H&M Semiconductor
File Size	732.90 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302BSR Datasheet
Additional preview pages of the HM2302BSR datasheet.

Product details

Description

The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management in Note book Portable Equipment Battery Powered System Load Switch

Features

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marking and pin Assignment SOT-523 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

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Published: Nov 27, 2018 |