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HM2302BSR Datasheet - H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

HM2302BSR Features

* RDS(ON)= 270 mΩ @VGS=4.5V

* RDS(ON)= 330 mΩ @VGS=2.5V

* RDS(ON)= 450 mΩ @VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302 G1 2S Marki

HM2302BSR General Description

The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS * Power Management in Note book * Portable Equipme.

HM2302BSR Datasheet (732.90 KB)

Preview of HM2302BSR PDF

Datasheet Details

Part number:

HM2302BSR

Manufacturer:

H&M Semiconductor

File Size:

732.90 KB

Description:

N-channel enhancement mode power mosfet.

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HM2302BSR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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