Datasheet Details
- Part number
- HM2302BSR
- Manufacturer
- H&M Semiconductor
- File Size
- 732.90 KB
- Datasheet
- HM2302BSR-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM2302BSR Description
.3(98 1&KDQQHO9 '6 026)(7 GENERAL .
The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2302BSR Features
* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
* Capable doing Cu wire bonding
DSC
1&KDQQHO
3D
2302
G1
2S
Marki
HM2302BSR Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
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