Datasheet Details
- Part number
- HM2302DR
- Manufacturer
- H&M Semiconductor
- File Size
- 445.34 KB
- Datasheet
- HM2302DR-HMSemiconductor.pdf
- Description
- N-Channel 20V MOSFET
HM2302DR Description
.3 *8 1&KDQQHO9 '6 026)(7 GENERAL .
The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2302DR Features
* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
* Capable doing Cu wire bonding
Absolute Maximum Ratings (TA=25℃ Unles
HM2302DR Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
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