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HM2302DR Datasheet - H&M Semiconductor

HM2302DR N-Channel 20V MOSFET

The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS * Power Management in Note book * Portable Equipmen.

HM2302DR Features

* RDS(ON)= 270 mΩ @VGS=4.5V

* RDS(ON)= 330 mΩ @VGS=2.5V

* RDS(ON)= 450 mΩ @VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unles

HM2302DR-HMSemiconductor.pdf