HM2302DR Datasheet - H&M Semiconductor

HM2302DR, N-Channel 20V MOSFET

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The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding Absolute Maximum Ratings (TA=25℃ Unles

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch

HM2302DR-HMSemiconductor.pdf