HM2302D Datasheet - H&M Semiconductor

HM2302D N-Channel Enhancement Mode Power MOSFET

The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS * Power Management in Note book * Portable Equipment.

HM2302D Features

* RDS(ON)= 270 mΩ @VGS=4.5V

* RDS(ON)= 330 mΩ @VGS=2.5V

* RDS(ON)= 450 mΩ @VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302D G1 2S Mark

HM2302D-HMSemiconductor.pdf