HM2302D - N-Channel Enhancement Mode Power MOSFET
The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS * Power Management in Note book * Portable Equipment
HM2302D Features
* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302D G1 2S Mark
