HM2302D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

.3 * 1&KDQQHO9'6026)(7 GENERAL .
The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

📥 Download Datasheet

HM2302D Datasheet Preview — Preview of HM2302D PDF

Datasheet Specifications

Part number: HM2302D
Manufacturer: H&M Semiconductor
File Size: 638.79 KB
Datasheet: HM2302D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)= 270 mΩ @VGS=4.5V
* RDS(ON)= 330 mΩ @VGS=2.5V
* RDS(ON)= 450 mΩ @VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302D G1 2S Mark

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch

HM2302D Distributors

📁 Related Datasheet

HM2301 HM2309 HM2310 HM236WU1-100 HM236WU1-300 HM236WU1-400

📌 All Tags

HM2302D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2302D-like datasheet