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HM2302F - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2302F by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2302F N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2302F N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2302F
Manufacturer	H&M Semiconductor
File Size	528.01 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302F-HMSemiconductor.pdf
Additional preview pages of the HM2302F datasheet.

HM2302F Product details

Description

The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 2.8A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram A2SHB Marking and pin assignment.

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Published: Nov 27, 2018 |