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HM2310B Datasheet - H&M Semiconductor

HM2310B N-Channel Enhancement Mode Power MOSFET

The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

HM2310B-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2310B

Manufacturer:

H&M Semiconductor

File Size:

690.38 KB

Description:

N-channel enhancement mode power mosfet.

HM2310B Distributor

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HM2310B HM2310B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor