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HM2310DR - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2310DR
Manufacturer	H&M Semiconductor
File Size	521.09 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2310DR-HMSemiconductor.pdf

HM2310DR Product details

Description

The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS =60V,ID =5A RDS(ON).

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Published: Jul 1, 2025 |