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HM2310PR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

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The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM2310PR
Manufacturer: H&M Semiconductor
File Size: 383.25 KB
Datasheet: HM2310PR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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HM2310PR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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