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HM2312B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2312B
Manufacturer	H&M Semiconductor
File Size	444.13 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2312B-HMSemiconductor.pdf

HM2312B Product details

Description

The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2312 Marking and pin assignment.

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Published: Nov 27, 2018 |