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HM2312B Datasheet - H&M Semiconductor

HM2312B, N-Channel Enhancement Mode Power MOSFET

HM2312B N-Channel Enhancement Mode Power MOSFET Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge
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Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

HM2312B-HMSemiconductor.pdf

Preview of HM2312B PDF

Datasheet Details

Part number:

HM2312B

Manufacturer:

H&M Semiconductor

File Size:

444.13 KB

Description:

N-channel enhancement mode power mosfet.

HM2312B Distributors

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📌 All Tags

HM2312B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM2312B-like datasheet
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