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HM30N10 - N-Channel Enhancement Mode Power MOSFET

HM30N10 Description

N-Channel Enhancement Mode Power MOSFET .
The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM30N10 Features

* VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package

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Datasheet Details

Part number
HM30N10
Manufacturer
H&M Semiconductor
File Size
558.24 KB
Datasheet
HM30N10-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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