Part number:
HM30N10
Manufacturer:
H&M Semiconductor
File Size:
558.24 KB
Description:
N-channel enhancement mode power mosfet.
Datasheet Details
HM30N10 Features
* VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package
Datasheet Details
HM30N10
H&M Semiconductor
558.24 KB
N-channel enhancement mode power mosfet.
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