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HM30N10 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM30N10 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM30N10

Datasheet Details

Part number	HM30N10
Manufacturer	H&M Semiconductor
File Size	558.24 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM30N10 Datasheet
Additional preview pages of the HM30N10 datasheet.

Product details

Description

The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Jul 1, 2025 |