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HM30N10K Datasheet - H&M Semiconductor

HM30N10K N-Channel Enhancement Mode Power MOSFET

HM30N10K Features

* VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ)

* Special process technology for high ESD capability

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package

HM30N10K-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM30N10K

Manufacturer:

H&M Semiconductor

File Size:

454.60 KB

Description:

N-channel enhancement mode power mosfet.

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HM30N10K HM30N10K N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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