HM30N10D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM30N10D N-Channel Enhancement Mode Power MOSFET .
The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM30N10D
Manufacturer: H&M Semiconductor
File Size: 483.38 KB
Datasheet: HM30N10D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID =30A RDS(ON) < 16mΩ @ VGS=10V (Typ:24mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package

HM30N10D Distributors

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HM30N10D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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