HM3207B Datasheet - H&M Semiconductor

HM3207B, N-Channel Enhancement Mode Power MOSFET

HM3207B N-Channel Enhancement Mode Power MOSFET .
The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM3207B

Manufacturer:

H&M Semiconductor

File Size:

399.10 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat

HM3207B Distributors

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HM3207B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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