HM3207BD N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3207BD N-Channel Enhancement Mode Power MOSFET .
The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM3207BD
Manufacturer: H&M Semiconductor
File Size: 482.69 KB
Datasheet: HM3207BD-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat

HM3207BD Distributors

📁 Related Datasheet

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HM3207BD N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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