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HM3207D - N-Channel Enhancement Mode Power MOSFET

HM3207D Description

+0' N-Channel Enhancement Mode Power MOSFET .
The +0' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM3207D Features

* VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat

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Datasheet Details

Part number
HM3207D
Manufacturer
H&M Semiconductor
File Size
288.54 KB
Datasheet
HM3207D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM3207D-like datasheet